Negative Bias Temperature Instability by Body Bias on Ring Oscillators in Thin BOX Fully-Depleted Silicon on Insulator Process

Initial and Long-Term Frequency Degradation on Ring Oscillators from Plasma Induced Damage in 65 nm Bulk and Silicon On Thin BOX processes

Degradation of reliability caused by plasma induced damage (PID) has become a significant concern with miniaturizing a device size. In this paper, we measure frequencies of ring oscillators with an antenna structure on a single stage. In bulk, PID is relieved by connecting an antenna to a drain because electric charge flow to a substrate. The difference of initial frequencies is 0.79 % between ...

Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors

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Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65nm bulk and fully depleted silicon-on-insulator processes

Initial Frequency Degradation and Variation on Ring Oscillators from Plasma Induced Damage in Fully-Depleted Silicon on Insulator Process

Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a device size. In this paper, we measure frequencies of ring oscillators with an antenna structure on a single stage. PID is relieved by connecting an antenna to a drain because charge flows to a substrate. The difference of initial frequencies is 0.64 % between structures whic...

Simulating Negative Bias Temperature Instability of p-MOSFETS

Introduction The degradation of MOSFET devices having relatively thin oxide layers is generally accepted as being mainly associated with the depassivation of silicon dangling bonds at the Si/SiO2 interface. These dangling bonds are initially passivated during the fabrication process by heating in hydrogen or, more rarely, a deuterium environment. The interface trap density is typically reduced ...